savantic semiconductor product specification silicon npn power transistors 2SD2257 d escription with to-220f package high dc current gain low saturation voltage complement to type 2sb1495 darlington applications high power switching applications hammer drive,pulse motor drive applications pinning pin description 1 base 2 collector 3 emitter absolute maximum ratings (ta=25 ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 100 v v ceo collector-emitter voltage open base 100 v v ebo emitter-base voltage open collector 8 v i c collector current 3 a i cm collector current-peak 5 a i b base current 0.3 a t a =25 2.0 p c collector dissipation t c =25 20 w t j junction temperature 150 t stg storage temperature -55~150 fig.1 simplified outline (to-220f) and symbol
savantic semiconductor product specification 2 silicon npn power transistors 2SD2257 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =10ma ;i b =0 100 v v cesat collector-emitter saturation voltage i c =1.5a ;i b =1.5ma 1.5 v v besat base-emitter saturation voltage i c =1.5a ;i b =1.5ma 2.0 v i cbo collector cut-off current v cb =100v ;i e =0 10 a i ebo emitter cut-off current v eb =8v; i c =0 0.8 4.0 ma h fe-1 dc current gain i c =1a ; v ce =2v 2000 h fe-2 dc current gain i c =2a ; v ce =2v 2000 v ecf diode forward voltage i e =1a 2.0 v switching times t on turn-on time 0.5 s t s storage time 2.0 s t f fall time i b1 =-i b2 =1.5ma v cc =30v ,r l =20 a duty cycle b 1% 0.5 s
savantic semiconductor product specification 3 silicon npn power transistors 2SD2257 package outline fig.2 outline dimensions
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